Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Small signal diodeDescription: Rectifier Diode, 1 Phase, 1Element, 50A, 1200V V(RRM), Silicon, 5.50 X 5.5MM, DIE-196215+$19.062850+$18.2482200+$17.7920500+$17.67791000+$17.56392500+$17.43355000+$17.35207500+$17.2706 -
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Category: TVSdiodeDescription: Rectifier Diode, 1 Phase, 1Element, 75A, 1200V V(RRM), Silicon, 7.50 X 7.5MM, DIE-199255+$35.013450+$33.5171200+$32.6792500+$32.46971000+$32.26022500+$32.02085000+$31.87127500+$31.7216 -
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Category: TVSdiodeDescription: Fast switching diode chip in EMCON 3- Technology small temperature coefficient1252 -
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Category: TVSdiodeDescription: Rectifier Diode, 1 Phase, 1Element, 35A, 1200V V(RRM), Silicon, 3.50 X 6.5MM, DIE-162105+$14.275250+$13.6651200+$13.3235500+$13.23811000+$13.15272500+$13.05515000+$12.99417500+$12.9331 -
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Category: TVSdiodeDescription: Rectifier Diode, 1 Phase, 1Element, 50A, 1200V V(RRM), Silicon, 6.50 X 6.5MM, DIE-116855+$26.766150+$25.6222200+$24.9817500+$24.82151000+$24.66142500+$24.47845000+$24.36407500+$24.2496 -
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Category: TVSdiodeDescription: Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.75291+$61.742410+$59.0579100+$58.5747250+$58.1989500+$57.60831000+$57.33992500+$56.96405000+$56.6419 -
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Category: TVSdiodeDescription: Rectifier Diode, 1 Phase, 1Element, 75A, 1700V V(RRM), Silicon, 6.80 X 6.8MM, DIE-148101+$38.486110+$36.2779100+$34.6375250+$34.3851500+$34.13281000+$33.84892500+$33.59655000+$33.4388 -
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Category: TVSdiodeDescription: Silicon carbide Schottky diode98391+$41.847210+$39.4462100+$37.6625250+$37.3881500+$37.11371000+$36.80502500+$36.53065000+$36.3591 -
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Category: TVSdiodeDescription: Silicon carbide Schottky diode54421+$39.364510+$37.1059100+$35.4281250+$35.1699500+$34.91181000+$34.62142500+$34.36335000+$34.2020 -
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Category: TVSdiodeDescription: INFINEON ESD112-B1-02ELS E6327 TVSDiode, ESD112-B1-02 series, bidirectional, 5.3 V, 21 V, TSSLP-2-4, 2-pin577420+$0.324050+$0.3000100+$0.2880300+$0.2784500+$0.27121000+$0.26645000+$0.261610000+$0.2568 -
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Category: Schottky diodeDescription: DD Series, Infineon * * Infineon * * PowerBLOCK dual diode (* * DD series * *) rectifier diode module has the following configuration: fast diode and rectifier diode. The range of the pressure contact technology rectifier diode module is 20mm to 60mm, with a voltage range of up to 1800V and a maximum current of 600A. The PowerBLOCK rectifier diode has an electrically insulated base that includes an isolated copper substrate. They can be used for power controllers, soft starters, and drive applications. The PowerBLOCK casing is easy to install with pressure contact technology for fault protection/short circuit in case of faults - preventing arcing in case of faults # # # diodes and rectifiers, Infineon25021+$514.884910+$501.453150+$491.1554100+$487.5736200+$484.8873500+$481.30551000+$479.06682000+$476.8282 -
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Category: TVSdiodeDescription: ESD Protector, Infineon Transient Voltage Suppressor (TVS) diode is suitable for applications that require high-speed ESD protection, Infineon458620+$0.363250+$0.3363100+$0.3228300+$0.3120500+$0.30401000+$0.29865000+$0.293210000+$0.2878 -
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Category: TVSdiodeDescription: ESD Protector, Infineon Transient Voltage Suppressor (TVS) diode is suitable for applications that require high-speed ESD protection, Infineon392110+$1.159750+$1.0995100+$1.0566300+$1.0308500+$1.00501000+$0.97932500+$0.94065000+$0.9320 -
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Category: TVSdiodeDescription: Diode Schottky 1.2kV 7.5A 2Pin Die24581+$159.638410+$155.473950+$152.2812100+$151.1706200+$150.3377500+$149.22721000+$148.53312000+$147.8390 -
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Category: TVSdiodeDescription: Diode Schottky 100V 60A 3Pin SMD-120321+$1941.669410+$1924.017925+$1915.192150+$1906.3663100+$1897.5406150+$1888.7148250+$1879.8890500+$1871.0632 -
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Category: Power diodeDescription: Bridge Rectifier; Package: PG-SOT143-4; Configuration: bridge; VR (max): 40V; IF (max): 200mA; IR (max): 10uA; VF (max): 0.62V;7093 -
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Category: Power diodeDescription: Diode: Schottky rectifying; SMD; 30V; 0.9A; SOT14334865+$4.237725+$3.923850+$3.7040100+$3.6099500+$3.54712500+$3.46865000+$3.437210000+$3.3901 -
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Category: Schottky diodeDescription: Infineon ### Diodes and rectifiers, Infineon60255+$2.196525+$2.033850+$1.9199100+$1.8711500+$1.83852500+$1.79785000+$1.781610000+$1.7572 -
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Category: Diode arrayDescription: INFINEON BAV 199 E6327 Diode small signal, AEC-Q101, dual isolation, 75 V, 200 mA, 1.1 V, 600 ns, 4.5 A420720+$0.167450+$0.1550100+$0.1488300+$0.1438500+$0.14011000+$0.13765000+$0.135210000+$0.1327 -
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Category: TVSdiodeDescription: INFINEON ESD114U102ELSE6327XTSA1 Static protection device, 21 V, TSSLP-2-3, new 2-pin24225+$2.471925+$2.288850+$2.1606100+$2.1057500+$2.06902500+$2.02335000+$2.004910000+$1.9775 -
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Category: Small signal diodeDescription: Rectifier Diode, 1 Phase, 1Element, 15A, 1200V V(RRM), Silicon, 3.20 X 3.2MM, DIE-1925010+$7.9512100+$7.5536500+$7.28861000+$7.27532000+$7.22235000+$7.15617500+$7.103110000+$7.0766 -
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Category: TVSdiodeDescription: Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.91191+$60.770610+$57.2838100+$54.6936250+$54.2951500+$53.89661000+$53.44832500+$53.04985000+$52.8007
